SiC Crystal Growth Automation.

SiC Crystal Growth Automation.

SiC Crystal Growth machines.

Semiconductor devices technology exploits the physical properties of Silicon Carbide – SiC, which leads to a growth in demand. Manufacturers must face the need to rapidly expand their production to unprecedented levels. Within this framework, it is known that automation plays a critical role.

Osai provides technology products able to meet the challenges: The solutions are tailored to provide SiC manufacturers with solutions that can be adapted to the necessary technical specifications with the highest level of precision and reliability, to ensure the stability and repeatability of the process.

Auto Seed Attach

Automatic Silicon Carbide (SiC)
Seed Preparation System

Auto Crucible Opening

Osai automated cell designed to perform
the steps of crucible opening

Auto Ingot

Automatic Silicon Carbide (SiC)
Ingot Characterization system